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Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films

High-quality AZO thin films were produced on a 4-inch Si substrate using large-area PLD equipment at a substrate temperature of 330 °C, with a ZnO: Al (98:2 wt.%) target. This study aims to enhance the electrical, optical, morphological and structural properties of large-area PLD-grown AZO thin film...

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Principais autores: Elena Isabela Bancu, Valentin Ion, Mihai Adrian Sopronyi, Stefan Antohe, Nicu Doinel Scarisoreanu
格式: Artigo
語言:Inglês
出版: MDPI AG 2025-11-01
叢編:Nanomaterials
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在線閱讀:https://www.mdpi.com/2079-4991/15/22/1722
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