Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films
High-quality AZO thin films were produced on a 4-inch Si substrate using large-area PLD equipment at a substrate temperature of 330 °C, with a ZnO: Al (98:2 wt.%) target. This study aims to enhance the electrical, optical, morphological and structural properties of large-area PLD-grown AZO thin film...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2025-11-01
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| Edice: | Nanomaterials |
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| On-line přístup: | https://www.mdpi.com/2079-4991/15/22/1722 |
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