Comparative Study of Aluminum-Doped Zinc Oxide, Gallium-Doped Zinc Oxide and Indium-Doped Tin Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering

A timely replacement of the rather expensive indium-doped tin oxide with aluminum-doped zinc oxide is hindered by the poor uniformity of electronic properties when deposited by magnetron sputtering. Recent results demonstrated the ability to improve the uniformity and to decrease the resistivity of...

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Principais autores:	Shadab Khan, Eugen Stamate
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-05-01
coleção:	Nanomaterials
Assuntos:	transparent conducting oxides aluminum-doped zinc oxide gallium-doped zinc oxide indium-doped tin oxide metal oxides magnetron sputtering
Acesso em linha:	https://www.mdpi.com/2079-4991/12/9/1539
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