Research progress on phase structure regulation of hafnium oxide-based ferroelectric thin films
With the development of microelectronics technology, hafnium oxide (HfO2) has become the research focus of new ferroelectric materials because of its compatibility with Si-based semiconductor technology, suitable relative dielectric constant, good thermal and chemical stabilities, and a large band g...
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| Auteurs principaux: | , , , , , , |
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| Format: | Artigo |
| Langue: | Chinês |
| Publié: |
Science Press
2024-04-01
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| Collection: | 工程科学学报 |
| Sujets: | |
| Accès en ligne: | http://cje.ustb.edu.cn/article/doi/10.13374/j.issn2095-9389.2023.05.10.003 |
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