Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage
The reverse-voltage dependence of a photocurrent in a Ni/ β -Ga _2 O _3 Schottky barrier diode was investigated under sub-bandgap monochromatic illumination with wavelengths ranging from 275 to 1200 nm. Under low reverse bias conditions, a photocurrent induced by internal photoemission was observed....
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IOP Publishing
2024-01-01
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| coleção: | Applied Physics Express |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.35848/1882-0786/ad9664 |
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