Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage

The reverse-voltage dependence of a photocurrent in a Ni/ β -Ga _2 O _3 Schottky barrier diode was investigated under sub-bandgap monochromatic illumination with wavelengths ranging from 275 to 1200 nm. Under low reverse bias conditions, a photocurrent induced by internal photoemission was observed....

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Bibliografiset tiedot

Päätekijät:	Takuya Maeda, Kentaro Ema, Kohei Sasaki
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	IOP Publishing 2024-01-01
Sarja:	Applied Physics Express
Aiheet:	gallium oxide franz-keldysh effect photocurrent high electric field internal photoemission barrier height
Linkit:	https://doi.org/10.35848/1882-0786/ad9664
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