Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys

In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb₂Te<sub>3</sub...

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Hlavní autoři:	Caroline Chèze, Flavia Righi Riva, Giulia Di Bella, Ernesto Placidi, Simone Prili, Marco Bertelli, Adriano Diaz Fattorini, Massimo Longo, Raffaella Calarco, Marco Bernasconi, Omar Abou El Kheir, Fabrizio Arciprete
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-03-01
Edice:	Nanomaterials
Témata:	PCM Ge-rich Ge-Sb-Te alloys heterostructures electronic properties
On-line přístup:	https://www.mdpi.com/2079-4991/12/6/1007
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