Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages
The intrinsic gain (Ai), transconductance efficiency (gm/IDS) and cut-off frequency (fT) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on the design window for analogue circuits. Results suggest that subthreshold ope...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2018-01-01
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| Saila: | IEEE Journal of the Electron Devices Society |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/8255822/ |
| Etiketak: |
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