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Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages

The intrinsic gain (Ai), transconductance efficiency (gm/IDS) and cut-off frequency (fT) are analysed for thin film transistors (TFTs) operating in the deep subthreshold region to assess the impact of device variations on the design window for analogue circuits. Results suggest that subthreshold ope...

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Principais autores: Xiang Cheng, Sungsik Lee, Arokia Nathan
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2018-01-01
Serier:IEEE Journal of the Electron Devices Society
Fag:
TFT
analog circuits
subthreshold operation
low power
Online adgang:https://ieeexplore.ieee.org/document/8255822/
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