Modeling of Electron Mobility of GaN at Low Temperature and Low Electric Field
An analytical model at low temperature and low field electron mobility of GaN has been developed. The electron mobility in GaN have been calculated using Relaxation Time Approximation method considering elastic process of acoustic phonon deformation potential scattering, acoustic piezoelectric scatt...
Bewaard in:
| Hoofdauteurs: | , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Sumy State University
2011-01-01
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| Reeks: | Журнал нано- та електронної фізики |
| Onderwerpen: | |
| Online toegang: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1071-1080.pdf |
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