Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor

Abstract In this work, a low leakage current ZrO2 was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO2 were prepared to investigate the film formation process and electrical performance fo...

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Autors principals:	Wei Cai, Honglong Ning, Zhennan Zhu, Jinglin Wei, Shangxiong Zhou, Rihui Yao, Zhiqiang Fang, Xiuqi Huang, Xubing Lu, Junbiao Peng
Format:	Artigo
Idioma:	Inglês
Publicat:	SpringerOpen 2019-03-01
Col·lecció:	Nanoscale Research Letters
Matèries:	Oxide dielectric Direct inkjet printing Interface Bias stress stability
Accés en línia:	http://link.springer.com/article/10.1186/s11671-019-2905-2
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