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RHLP-18T: A Radiation-Hardened 18T SRAM with Enhanced Read Stability and Low Power Consumption

Electronic equipment in space is constantly exposed to high-energy particles, which can induce Single Event Upsets (SEUs) in memory components, threatening system reliability. To address this critical challenge, we propose RHLP-18T, a radiation-hardened 18-transistor (18T) Static Random-Access Memor...

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Hlavní autoři: Han-Gyeol Kim, Sung-Hun Jo
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI AG 2025-05-01
Edice:Applied Sciences
Témata:
critical charge
single event upset (SEU)
static random-access memory (SRAM)
read stability
low power
On-line přístup:https://www.mdpi.com/2076-3417/15/10/5712
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