Deep Neural Network Using Transfer Learning Technique for MOSFETs With Different Gate Lengths in Avalanche Region
In this paper, a transfer learning technique was first utilized to obtain deep neural network models for different gate lengths in the avalanche breakdown regime. Once the characteristics of a gate-length metal-oxide-semiconductor field-effect transistor are measured and the data are used to obtain...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2024-01-01
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| coleção: | IEEE Access |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/10735156/ |
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