Deep Neural Network Using Transfer Learning Technique for MOSFETs With Different Gate Lengths in Avalanche Region

In this paper, a transfer learning technique was first utilized to obtain deep neural network models for different gate lengths in the avalanche breakdown regime. Once the characteristics of a gate-length metal-oxide-semiconductor field-effect transistor are measured and the data are used to obtain...

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Autori principali:	Chie-In Lee, Shi-Yan Zhang, Shih-Chieh Li, Jia-Han Yang, Jian Cheng Su
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IEEE 2024-01-01
Serie:	IEEE Access
Soggetti:	Transfer learning technique deep neural network metal-oxide-semiconductor field-effect transistor breakdown
Accesso online:	https://ieeexplore.ieee.org/document/10735156/
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