Anisotropic Resistive Switching in NiO Thin Films Deposited on Stepped MgO Substrates

Thin films of nickel oxide (NiO) were deposited on a 5° miscut magnesium oxide (MgO)(100) substrate using electron-beam evaporation to pursue morphology-directed resistive switching. The atomic force microscope (AFM) confirmed a stepped surface with a terrace width of ~85 nm and a step height of ~7...

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Bibliografski detalji

Glavni autori:	Tolagay Duisebayev, Mergen Zhazitov, Muhammad Abdullah, Yerbolat Tezekbay, Askar Syrlybekov, Margulan Ibraimov, Bakyt Khaniyev, Timur Serikov, Nurxat Nuraje, Olzat Toktarbaiuly
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2025-11-01
Serija:	Nanomaterials
Teme:	resistive random-access memory nickel oxide anisotropic switching stepped MgO substrate
Online pristup:	https://www.mdpi.com/2079-4991/15/22/1703
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