In Situ Optical Monitoring and Morphological Evolution of Si Nanowires Grown on Faceted Al₂O₃(0001) Substrates

This paper presents the growth and in situ optical characterization of silicon nanowires (Si NWs) on Al₂O₃(0001) substrates that are thermally faceted using the atomic low angle shadowing technique (ATLAS) method. Annealing Al₂O₃ substrates in air before s...

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Detalhes bibliográficos

Principais autores:	Olzat Toktarbaiuly, Mergen Zhazitov, Muhammad Abdullah, Yerbolat Tezekbay, Nazerke Kydyrbay, Nurxat Nuraje, Tolagay Duisebayev
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2025-10-01
coleção:	Nanomaterials
Assuntos:	silicon nanowires (Si NWs) reflectance anisotropy spectroscopy (RAS) catalyst-free growth faceted sapphire substrates (Al<sub>2</sub>O<sub>3</sub>(0001)) in situ optical monitoring amorphous-to-crystalline transition
Acesso em linha:	https://www.mdpi.com/2079-4991/15/20/1589
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