Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors
We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology...
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| Principais autores: | , |
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| 格式: | Artigo |
| 语言: | Inglês |
| 出版: |
MDPI AG
2015-02-01
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| 丛编: | Sensors |
| 主题: | |
| 在线阅读: | http://www.mdpi.com/1424-8220/15/2/4253 |
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