Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated. It is found that before X-ray irradiation the dominant type of RTN among the noisiest pixels is the sour...
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| Asıl Yazarlar: | , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2019-01-01
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| Seri Bilgileri: | IEEE Journal of the Electron Devices Society |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/8612927/ |
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