Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to characterize the RTN of subthreshold currents approx...

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Bibliografische Detailangaben

Hauptverfasser:	Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	IEEE 2021-01-01
Schriftenreihe:	IEEE Journal of the Electron Devices Society
Schlagworte:	Random noise (RN) random telegraph noise (RTN) random telegraph signal (RTS) CMOS image sensor (CIS) correlated double sampling (CDS) subthreshold current
Online-Zugang:	https://ieeexplore.ieee.org/document/9577145/
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