Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor
The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunction...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Politehperiodika
2012-12-01
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| coleção: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Assuntos: | |
| Acesso em linha: | http://www.tkea.com.ua/tkea/2012/6_2012/pdf/09.zip |
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