Semiconductor heterojunctions of oxide-InSe(GaSe) for photoelectric analyzers of polarized radiation
The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge absorption of light by the crystals, which coincide...
Na minha lista:
| Principais autores: | , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Politekhperiodika
2004-06-01
|
| Serier: | Технологія та конструювання в електронній апаратурі |
| Fag: | |
| Online adgang: | https://tkea.com.ua/index.php/journal/article/view/1152 |
| Tags: |
Ingen Tags, Vær først til at tagge denne postø!
|