Semiconductor heterojunctions of oxide-InSe(GaSe) for photoelectric analyzers of polarized radiation
The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge absorption of light by the crystals, which coincide...
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| Hlavní autoři: | , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Politekhperiodika
2004-06-01
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| Edice: | Технологія та конструювання в електронній апаратурі |
| Témata: | |
| On-line přístup: | https://tkea.com.ua/index.php/journal/article/view/1152 |
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