Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors
This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperat...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2023-01-01
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| Seri Bilgileri: | IEEE Open Journal of Power Electronics |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/10097862/ |
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