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Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperat...

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Principais autores: Michael Gleissner, Dominik Nehmer, Mark-M. Bakran
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2023-01-01
Serier:IEEE Open Journal of Power Electronics
Fag:
Junction temperature
semiconductor device measurements
silicon carbide devices
temperature measurement
temperature-sensitive electrical parameters
wide-band-gap devices
Online adgang:https://ieeexplore.ieee.org/document/10097862/
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