Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperat...

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Egile Nagusiak:	Michael Gleissner, Dominik Nehmer, Mark-M. Bakran
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	IEEE 2023-01-01
Saila:	IEEE Open Journal of Power Electronics
Gaiak:	Junction temperature semiconductor device measurements silicon carbide devices temperature measurement temperature-sensitive electrical parameters wide-band-gap devices
Sarrera elektronikoa:	https://ieeexplore.ieee.org/document/10097862/
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