Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
Hf<i><sub>x</sub></i>Zr<sub>1−<i>x</i></sub>O<sub>2</sub> (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (P<sub>r</sub>) and fatigue...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2022-02-01
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| Edice: | Nanomaterials |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2079-4991/12/3/548 |
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