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Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Hf<i><sub>x</sub></i>Zr<sub>1−<i>x</i></sub>O<sub>2</sub> (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (P<sub>r</sub>) and fatigue...

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Principais autores: Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo, Hee-Chul Lee
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2022-02-01
Serier:Nanomaterials
Fag:
HZO
PEALD
ferroelectric memory
deposition temperature
film density
remanent polarization
Online adgang:https://www.mdpi.com/2079-4991/12/3/548
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