Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation
The radiation response of HfO2 films on a silicon substrate under gamma rays is studied in this article. HfO2 films with the thickness of 12.8 and 4.3 nm are prepared on a p-type silicon substrate by using the atomic layer deposition method, and the HfO2/Si MOS structure is irradiated under gamma ra...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2021-06-01
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| coleção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0048080 |
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