Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after the substrate temperature reaches the growth tempera...
Wedi'i Gadw mewn:
| Prif Awduron: | , , |
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| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2017-04-01
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| Cyfres: | Crystals |
| Pynciau: | |
| Mynediad Ar-lein: | http://www.mdpi.com/2073-4352/7/5/123 |
| Tagiau: |
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