Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics of the MQW...

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Detalhes bibliográficos

Principais autores:	Dong Liu, Sang June Cho, Huilong Zhang, Corey R. Carlos, Akhil R. K. Kalapala, Jeongpil Park, Jisoo Kim, Rafael Dalmau, Jiarui Gong, Baxter Moody, Xudong Wang, John D. Albrecht, Weidong Zhou, Zhenqiang Ma
Formato:	Artigo
Idioma:	Inglês
Publicado em:	AIP Publishing LLC 2019-08-01
coleção:	AIP Advances
Acesso em linha:	http://dx.doi.org/10.1063/1.5108743
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