Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates
Temperature-dependent electroluminescence measurements are performed for 265-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) grown on AlN substrates. The external quantum efficiency (EQE) increases as the temperature decreases from 293 K to 6 K. Using two assumptions, the internal...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
AIP Publishing LLC
2020-12-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/5.0024179 |
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