Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n⁺-MoS₂/WSe<sub...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Zezhang Yan, Ningsheng Xu, Shaozhi Deng
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2024-04-01
Цуврал:	Nanomaterials
Нөхцлүүд:	two-dimensional material van der Waals bipolar junction transistor vertical stacked MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> heterostructure breakdown characteristic
Онлайн хандалт:	https://www.mdpi.com/2079-4991/14/8/718
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!