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Realization of High Current Gain for Van der Waals MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Bipolar Junction Transistor

Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n<sup>+</sup>-MoS<sub>2</sub>/WSe<sub...

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Principais autores: Zezhang Yan, Ningsheng Xu, Shaozhi Deng
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2024-04-01
Colecção:Nanomaterials
Assuntos:
two-dimensional material
van der Waals
bipolar junction transistor
vertical stacked
MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> heterostructure
breakdown characteristic
Acesso em linha:https://www.mdpi.com/2079-4991/14/8/718
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