Realization of High Current Gain for Van der Waals MoS₂/WSe₂/MoS₂ Bipolar Junction Transistor

Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n⁺-MoS₂/WSe<sub...

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Autors principals:	Zezhang Yan, Ningsheng Xu, Shaozhi Deng
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2024-04-01
Col·lecció:	Nanomaterials
Matèries:	two-dimensional material van der Waals bipolar junction transistor vertical stacked MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> heterostructure breakdown characteristic
Accés en línia:	https://www.mdpi.com/2079-4991/14/8/718
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