Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials

In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson an...

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Principais autores:	Tawseef A. Bhat, M. Mustafa, M.R. Beigh
格式:	Artigo
语言:	Inglês
出版:	Sumy State University 2015-10-01
丛编:	Журнал нано- та електронної фізики
主题:	SCE DIBL SS Threshold voltage FinFET ITR
在线阅读:	http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdf
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