Atomic diffusion and electrical reliability of NiAl/SiO2 interconnect: Breakdown voltage and TDDB characteristics
This study reports the effects of post-annealing on the electrical reliability of a NiAl/SiO2 interconnect structure for potential use as post-Cu interconnect. Our materials characterization using transmission electron microscopy and secondary ion mass spectrometry discloses that annealing at elevat...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Elsevier
2024-05-01
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| Serie: | Journal of Materials Research and Technology |
| Soggetti: | |
| Accesso online: | http://www.sciencedirect.com/science/article/pii/S223878542401192X |
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