Atomic diffusion and electrical reliability of NiAl/SiO2 interconnect: Breakdown voltage and TDDB characteristics
This study reports the effects of post-annealing on the electrical reliability of a NiAl/SiO2 interconnect structure for potential use as post-Cu interconnect. Our materials characterization using transmission electron microscopy and secondary ion mass spectrometry discloses that annealing at elevat...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Elsevier
2024-05-01
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| Cyfres: | Journal of Materials Research and Technology |
| Pynciau: | |
| Mynediad Ar-lein: | http://www.sciencedirect.com/science/article/pii/S223878542401192X |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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