Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge pumping is often described as a process that...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2020-03-01
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| Edice: | Micromachines |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2072-666X/11/4/364 |
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