A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocity sat...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2001-01-01
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| coleção: | Active and Passive Electronic Components |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1155/2001/34065 |
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