A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocity sat...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Wiley
2001-01-01
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| Cyfres: | Active and Passive Electronic Components |
| Pynciau: | |
| Mynediad Ar-lein: | http://dx.doi.org/10.1155/2001/34065 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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