Study of the Electronic Properties and Hall Effect of Amorphous Si1-xGex:H Thin Films
The electronic properties and Hall effect of thin amorphous Si1-xGex:H films of thickness (350 nm) have been studied such as dc conductivity, activation energy, Hall coefficient under magnetic field (0.257 Tesla) for measuring carrier density of electrons and holes and Hall mobility as a function o...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
University of Baghdad
2009-12-01
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| Schriftenreihe: | Iraqi Journal of Physics |
| Schlagworte: | |
| Online-Zugang: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/876 |
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