A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of...
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| Główni autorzy: | , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI AG
2022-06-01
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| Seria: | Crystals |
| Hasła przedmiotowe: | |
| Dostęp online: | https://www.mdpi.com/2073-4352/12/7/916 |
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