Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO₂ Layers for Near-Room-Temperature Operation

We examined the effect of SiO₂ passivation on the parameters of mesa heterostructure InAs/InAsSbP photodiodes with a spectral responsivity 50% cut off at 3.5 µm at 295 K, specific to the InAs absorber layer. The <i>R</i>₀<i>A</i> product was found to increase by 30% after passi...

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Váldodahkkit:	Jarosław Pawluczyk, Krzysztof Kłos, Oskar Ślęzak, Kinga Majkowycz, Krzysztof Murawski, Tetiana Manyk, Jarosław Rutkowski, Piotr Martyniuk
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2025-09-01
Ráidu:	Proceedings
Fáttát:	sensors indium arsenide photodiodes infrared detectors dark current
Liŋkkat:	https://www.mdpi.com/2504-3900/129/1/13
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