Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a m...

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Библиографические подробности

Главные авторы:	Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2022-10-01
Серии:	Applied Sciences
Предметы:	Ga-free InAs/InAsSb type-II superlattice XBn detector midwave infrared dark current quantum efficiency
Online-ссылка:	https://www.mdpi.com/2076-3417/12/20/10358
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