Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3...

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Библиографические подробности

Главные авторы:	Ahmet Lale, Auriane Grappin, Laurent Mazenq, David Bourrier, Aurélie Lecestre, Jérôme Launay, Pierre Temple-Boyer
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2017-08-01
Серии:	Proceedings
Предметы:	ChemFET finFET MOSFET ISFET silicon nanowire biosensor potentiometric sensor nanosensor microsensor pH measurement microfluidics gate all-around
Online-ссылка:	https://www.mdpi.com/2504-3900/1/4/419
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