Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface pa...

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Bibliografske podrobnosti

Principais autores:	P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi, V.N. Ramakrishnan, Arathy Varghese, MOHD Wasim, S. Baskaran, R. Saravana Kumar, V. Janakiraman
Format:	Artigo
Jezik:	Inglês
Izdano:	Elsevier 2020-06-01
Serija:	Journal of Science: Advanced Materials and Devices
Teme:	MOS-HEMT HfO2 JFoM Microwave applications Cut-off frequency Leakage current
Online dostop:	http://www.sciencedirect.com/science/article/pii/S2468217920300332
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