Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
In this work, we have theoretically investigated the intermixing effect in highly strained In<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs QW taking into consideration the composition profile change resulting from in-situ indium surface segregation. To study the impact of the segregation effects on the post...
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| Autores principales: | , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2015-09-01
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| Colección: | Condensed Matter Physics |
| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.5488/CMP.18.33005 |
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