Characteristics Measurement in a Deep UV Single Photon Detector Based on a TE-cooled 4H-SiC APD

We report on the characteristics of a lab-assembled UV single photon detector based on a thermoelectrically cooled silicon carbide (4H-SiC) avalanche photodiode (APD). The SiC- APD in this experiment was fabricated with a beveled mesa structure, with electronics designed to achieve passive Geiger-mo...

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Váldodahkkit:	In-Ho Bae, Seongchong Park, Kee-Suk Hong, Dong-Hoon Lee
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	IEEE 2023-01-01
Ráidu:	IEEE Photonics Journal
Fáttát:	Afterpulsing probability deep UV SPAD 4H-SiC single photon avalanche diodes
Liŋkkat:	https://ieeexplore.ieee.org/document/10018176/
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