A Programmable Active Recharge Circuit for SPAD in 110-nm BSI CMOS
This paper presents a programmable active recharge (AR) circuit optimized for a single-photon avalanche diode (SPAD) fabricated in a 110-nm BSI CMOS process. The SPAD employs a p-well and deep n-well junction. A retrograde p-substrate guard-ring, which is located at the junction edges, suppresses th...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
IEEE
2025-01-01
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| Colección: | IEEE Access |
| Materias: | |
| Acceso en línea: | https://ieeexplore.ieee.org/document/11087606/ |
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