An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution

This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performance such as refresh time (tREF). However, no method...

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Hlavní autoři:	Min Hee Cho, Namho Jeon, Taek Yong Kim, Moonyoung Jeong, Sungsam Lee, Jong Seo Hong, Hyeong Sun Hong, Satoru Yamada
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2018-01-01
Edice:	IEEE Journal of the Electron Devices Society
Témata:	DRAM cell transistor leakage current distribution gate-induced drain leakage current (GIDL) process variation refresh time
On-line přístup:	https://ieeexplore.ieee.org/document/8067456/
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